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| MJE13009 SILICON NPN SWITCHING TRANSISTOR s SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCEV VEBO IC ICM IB I BM IE I EM Pt ot T stg Tj Parameter Collector-Emitter Voltage (IB = 0) Collector-Emitter Voltage (VBE = -1.5 V) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p 10 ms) Base Current Base Peak Current (t p 10 ms) Emitter Current Emitter Peak Current Tot al Power Dissipation at T c 25 C o Value 400 700 9 12 24 6 12 18 36 100 -65 to 150 150 Unit V V V A A A A A A W o o Storage Temperature Max. Ope rating Junction Temperature C C 1/6 September 1997 MJE13009 THERMAL DATA R thj-ca se Thermal Resistance Junction-case o Max 1.25 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol ICEV Parameter Collecto r Cut-of f Current Test Conditions VCEV = rated value VBE(off ) = 1.5 V VCEV = rated value VEB(off ) = 1.5 V T cas e = 100o C VEB = 9 V I C = 10 mA IC = 5 A IC = 8 A I C = 12 A IC = 8 A T cas e = 100o C IC = 5 A IC = 8 A IC = 8 A T cas e = 100o C IC = 5 A IC = 8 A I C = 500 mA VCB = 10 A f = 0.1 MHz RESISTIVE LOAD VCC = 125 V I B1 = -I B2 = 1.6 A Duty Cycle 1% IE = 0 IB IB IB IB = = = = 1A 1.6 A 3A 1.6 A 400 1 1. 5 3 2 IB = 1 A IB = 1.6 A IB = 1.6 A VCE = 5 V VCE = 5 V VCE = 10 V IE = 0 8 6 4 180 1. 1 3 0. 7 1. 2 1. 6 1. 5 40 30 MHz pF s s s Min. Typ. Max. 1 Unit mA 5 1 mA mA V V V V V V V V I EBO Emitter Cut-off Current (I C = 0) V CEO(su s) Collecto r-Emitter Sustaining Voltage V CE(sat ) Collecto r-Emitter Saturation Voltage VBE( sat) Base-Emitter Saturation Voltage hFE fT C OB DC Current Gain Transistor Frequ ency Output Capacita nce t on ts tf Turn-on Time Storage Time Fall Time IC = 8A t p = 25 s Pulsed: Pulse duration = 300s, duty cycle 2 % Safe Operating Areas Derating Curve 2/6 MJE13009 DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Inductive Fall Time Inductive Storage Time 3/6 MJE13009 Reverse Biased SOA RBSOA and Inductive Load Switching Test Circuit (1) Fast electronic switch (2) Non-inductive Resistor (3) Fast recovery rectifier 4/6 MJE13009 TO-220 MECHANICAL DATA DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107 P011C 5/6 MJE13009 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A . .. 6/6 |
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